JEOL JBX-3200MVS Electron Beam Lithography System Specifications

JBX-3200MVS is a variable-shaped electron beam lithography system for mask making of 32 nm to 28 nm nodes.

Its advanced technology achieves high speed, high precision and high reliability.

This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat specimen stage.

● Mask Size:                6"（6025） ；

● Current Density:           70A/cm² ；

● Electron Beam:                   50kv ；

● Stitching Accuracy:    ≦ ±3.5 nm ；

● Overlay Accuracy:      ≦ ±5.0 nm ；